The principle of photoelectric response of graphene edge embedded nanofilm and its application in sensor

No.51605306

       2D material is a promising material for the next generation photo-electric sensor applied on wearable nano/micro mechantronic devices due to its unique photoelectric property. However, the role played by 2D material edge states in the photoelectric response is still overlooked and seldom investigated, hindering the development and application of novel photoelectric sensor. Recently, it was revealed that a kind of graphene-edge-rich nanofilm has the potential ability of high output and fast response, since the lowered edge potential wells formed in the nanofilm can serve as trapping centers of photo-excited electrons (also called “edge quantum well”), leading to the dramatically deduction of the electron-hole recombination rate. Hence, this project proposed and focused on the scientific problem - the principle of photoelectric response of graphene edge embedded nanofilm, and investigated it from three perspectives, i) the theory based on edge quantum well trapping of photo-electrons, ii) the technique testing the photosensing properties of different edge-density graphene edge embedded nanofilms, and, iii) the aim to acheive the nanofilm photoelectric sensor with high output and fast response. The results are of great scientific significance and of application value to enrich the conventional photoelectric response principle based on semiconductor theory and to explore the novel nanofilm photoelectric sensor modulated by edge quantum well.