Originating Principle and Managing Research of Strong Magnetoresistance Effect in Standing-Up Graphene Sheet EmbeddedNo. 51305274

Magnetoresistance effect devices are widely applied in electric navigating and magnetic field measurement, consuming a lot of metal resources since they are prepared from magnetic metallic films. Since graphene can generate magnetoresistance effect due to spin polarize at the edge defects, it has attracted much attentions, though the directly growth of graphene based 3-dimensional magnetoresistance device is not realized yet. Based on above background, this application proposed a scientific problem of "Originating Principles and Managing Research of Strong Magnetoresistance Effect in Standing-Up Graphene Sheet Embedded Carbon Structure", and tend to carry out studies in three aspects: magnetoresistance originating due to orderly arrangement of embedded graphene sheets, the enhancement of magnetoresistance due to size effect, and the response of parallel connected graphene sheets. The graphene sheets are vertically formed by low energy electron inducing, the graphene sheets stacking, in plane size and parallel connected number are modified by electron irradiation parameters, growth height and mask size. ESR and Raman spectra are introduced to study the electronic structure, thereafter the originating principles of strong magnetoresistance are proposed. PPMS is introduced to investigate the magnetoresistance value, thereafter the managing principles of magnetoresistance is proposed. This research will provide new methods to explore the originating of magnetoresistance in standing-up graphene sheet, and open a new mind to fabricate graphene-based magnetoresistance devices.