Edge Effect on the Photodetection Ability of the Graphene Nanocrystallites Embedded Carbon Film Coated on p-SiliconViews [1537] Delivery time :2019-02-18 15:52:38
Edge Effect on the Photodetection Ability of the Graphene Nanocrystallites Embedded Carbon Film Coated on p-Silicon
Phys. Status Solidi RRL 2019, 1800511（PDF-File）
Xi Zhang, Da Peng, Zezhou Lin, Wencong Chen, and Dongfeng Diao*
A sensitive photodetector of graphene nanocrystallites embedded carbon (GNEC) film coated on p-silicon has been 
proposed. Different from the conventional growth mode of graphene, GNEC film contains a large amount of vertically grown graphene nanocrystallites (GNs). Edges of GNs act as electron trapping centers, increasing the ability to capture electrons. Different types of films are prepared under various deposition biases (20, 40, 60, and 80 V), which have different density of edges (Nedge). Edge entrapment improves the photocurrent responsivity of 40 V film (high Nedge) to 0.401 A W1, compared with 0.126 AW1 of 20 V film (amorphous, no Nedge) and 0.194 AW1 of 80 V film (low Nedge). A high specific detectivity of 1.341012 cm Hz1/2W1 is exhibited at zero bias. GNs maintain a charge transport channel, which makes it have a fast response time τrise¼260 ns.